Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel-junction-cascaded active regions

GaN-based vertical-cavity laser performance improvements using tunnel-junction-cascaded active regions

This Letter investigates the output power enhancement achieved by tunnel junction insertion into the InGaN multi-quantum well (MQW) active region of a 410 nm vertical-cavity surface-emitting laser which enables the repeated use of carriers for light generation (carrier recycling). While the number of quantum wells remains unchanged, the tunnel junction eliminates absorption caused by the non-un...

Origin of InGaN light-emitting diode efficiency improvements using chirped AlGaN multi-quantum barriers

We analyze efficiency droop reductions in InGaN/GaN light-emitting diodes caused by a chirped AlGaN/GaN multi-quantum barrier (MQB). Such electron barriers are expected to create an additional forbidden energy range above the natural conduction band edge, which reduces the electron leakage current. Advanced numerical device simulations reveal that energy band bending practically eliminates this...

InGaN/GaN light-emitting diode with a polarization tunnel junction

Effects of In profile on simulations of InGaN/GaN multi-quantum-well light-emitting diodes

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On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer

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